| Abstract [eng] |
In this work two methods of direct graphene synthesis are analyzed: cobalt-assisted ion beam synthesis and microwave plasma-enhanced chemical vapor deposition. Raman scattering spectroscopy and optical microscopy were used to study the structure and properties of graphene on a Si(100) substrate. During the work, the optimal parameters of graphene ion beam synthesis (cobalt layer thickness, heating temperature, and growth time) were determined. The influence of graphene doping by nitric acid, which was used in ion beam synthesis for removing the cobalt layer, was also investigated. Nitric acid has been shown to cause n-type doping of graphene, which is not typical compared to the literature review. Also, boundary-type defects were found to be introduced by both synthesis and a higher amount of those defects were found by synthesis of microwave plasma-enhanced chemical vapor deposition. |
