| Abstract [eng] |
In this work, we are investigating directly synthesized graphene application for photovoltaic devices. We are analyzing main graphene experimental methods and their applications for directly synthesized graphene using plasma enhanced chemical vapor deposition. Thin films, were formed on Si(100) and fused silica substrates. For structural peculiarity investigation, Raman spectroscopy, optical spectroscopy and atomic force microscopy were used. For identification of optical bandgap, in graphene as grown on fused silica substrates, Tauc formalism was employed. Formed photovoltaic devices electrical and photovoltaic properties were tested. Vertical graphene formation was observed in cases were graphene was grown on fused silica directly, however in Si(100) case, graphene was planar. Graphene thickness increase was observed when increasing synthesis duration. When analyzing optical properties, graphene grown on fused silica exhibited reduced graphene oxide behavior and this phenomenon was confirmed when calculating optical bandgap of such samples (in both cases ~2,4 eV). Photovoltaic device optical sensitivity yielded results, which favored samples with additional hydrogen plasma annealing prior graphene growth. This treatment increases device photovoltaic parameters (open-circuit voltage, short-circuit current) and photocurrent. |
