| Title |
Simulation of stress distribution in the silicon substrate / |
| Another Title |
Įtempių pasiskirstymo silicio luste matematinis modeliavimas. |
| Another Title |
Математическое моделирование распределения натяжений в структуре кремния. |
| Authors |
Keršys, T ; Anilionis, R ; Eidukas, D |
| Full Text |
|
| Is Part of |
Elektronika ir elektrotechnika.. Kaunas : Technologija. 2007, Nr. 4, p. 3-8.. ISSN 1392-1215. eISSN 2029-5731 |
| Keywords [eng] |
semiconductors ; electrolytic oxidation ; silicon-on-insulator technology ; strains and stresses ; digital computer simulation |
| Abstract [eng] |
Si oxidation technological process is common occurrence in the semiconductors production process. The oxide which is growing in thermal oxidation causes intrinsic stresses in all structure. In stress area might be arising dislocations. Various intrinsic stresses appear when using integrated elements isolation methods such as LOCOS and oxidized trench. Thin films such as silicon nitride, silicon oxide and polysilicon are mostly usable in the semiconductors production. These films have the intrinsic stresses, which appear in the films deposition process apropos of different thermal expansion coefficients of the materials. By using mathematical simulation program ATHENA was accomplished mathematical simulation of Si thermal oxidation and thin film deposition technological processes and was evaluated the distribution of stresses in all semiconductor structure. |
| Published |
Kaunas : Technologija |
| Type |
Journal article |
| Language |
English |
| Publication date |
2007 |
| CC license |
|
