| Abstract [eng] |
The processes of obtaining semiconductive and electrically conductive layers of mixed copper chalcogenides CuxS–CuyTe by the sorption-diffusion method on polyamide 6 using solutions of potassium and sodium telluropentathionates, K2TeS4O6 and Na2TeS4O6, and of telluropentathionic acid, H2TeS4O6, as precursors of chalcogens (Te and S) are compared. The concentration of sorbed chalcogens increases with the increase of the duration of treatment and concentration of precursor solution in cases of all precursors used. Copper chalcogenide layers are formed on the surface of polyamide after the treatment of chalcogenized polymer with Cu(II/I) salt solution. The concentration of copper in the layer increases with the increase of initial chalcogenization duration. XRD spectra of PA films treated for different time with solutions of telluropentathionates and then with Cu(II/I) salt solution showed the maxima characteristic of the copper sulfide and copper telluride phases, tellurium sulfide TeS7 and of elemental tellurium. Six copper sulfide phases, chalcocite, Cu2S, djurleite, Cu1.9375S, anilite, Cu1.75S, digenite, Cu1.80S, villamanite, CuS2, covelite, CuS, three copper telluride phases Cu4Te3, Cu1.85Te, rickardite, Cu7Te5, and tellurium sulfide TeS7 were identified in the layers formed using (0.025 – 0.1) mol/dm3 solutions of potassium telluropentathionate.[...]. |
