| Title |
Thermal oxidation process influence to the V-MOS structure / |
| Another Title |
Terminės oksidacijos proceso įtaka V-MOP struktūroms. |
| Authors |
Andriukaitis, D |
| Full Text |
|
| Is Part of |
Elektronika ir elektrotechnika.. Kaunas : Technologija. 2010, Nr. 2, p. 45-48.. ISSN 1392-1215. eISSN 2029-5731 |
| Abstract [eng] |
Problems of thermal oxidation process influence, related with V-MOS transistors separation was researched. Silicon thermal oxidation process described as a system using kinetics model. Three-dimensional integrated structures are formed using the finite element method for local thermal oxidation process simulation. Determinated, that parameters of “V” three-dimensional integrated element and three-dimensional integrated structure change due to the thermal technology, which are difficult to identify and evaluate during the production. Redistribution of impurities in the thermal process is very important for the production of three dimensional integrated structures of increasingly higher integration degree, impurities move to other areas or redistribute because of the thermal process, error occurs in the formed areas. It was obtained by simulation that the three-dimensional V-MOS technology saves about 40 % of the area compare to three-dimensional NMOS technology. |
| Published |
Kaunas : Technologija |
| Type |
Journal article |
| Language |
English |
| Publication date |
2010 |
| CC license |
|
