| Title |
Properties of Ge(X)O(Y):H thin films produced by plasma-assisted chemical vapor deposition |
| Another Title |
Plazminiu būdu (PCVD) nusodintų plonųjų GeXOY:H dangų savybės. |
| Authors |
Užupis, Arnoldas ; Tyczkowski, Jacek ; Gubiec, Kondrad ; Tamulevičius, Sigitas ; Andrulevičius, Mindaugas ; Pucėta, Mindaugas |
| Full Text |
|
| Is Part of |
Materials science = Medžiagotyra.. Kaunas : Technologija. 2009, vol. 15, no. 1, p. 7-10.. ISSN 1392-1320. eISSN 2029-7289 |
| Keywords [eng] |
germanium oxides ; residual stress ; XPS ; AFM |
| Abstract [eng] |
Amorphous germanium oxide (GexOy:H) films, 0.2 μm – 1.2 μm thick, produced by plasma-assisted chemical vapor deposition from a mixture of tetramethylgermanium (TMGe) and oxygen (O2) in radio-frequency (13.56 MHz) glow discharge, were investigated. Highly transmitting (> 80 % at wavelength 300 nm – 800 nm) GexOy:H films grew at rate of approx. 0.8 nm/s. The film structure and morphology were determined by XPS, X-ray diffraction and atomic force microscopy. The thickness of the films was evaluated by ellipsometry. Optical interferometry was used, in turn, to measure the residual stress in the GexOy:H films. The correlation between the residual stress and chemical composition of the films was analyzed. |
| Published |
Kaunas : Technologija |
| Type |
Journal article |
| Language |
English |
| Publication date |
2009 |
| CC license |
|
