| Abstract [eng] |
The investigation of new functional materials (ceramics) based on cerium (IV) oxides is a promising field of scientific research. A wide application in the industry received composite materials based on СeO2–Gd2O3 and СeO2–Sm2O3. In this work thin films were formed on the basis of (CeO2 with 10 mol% Gd2O3 (GDC10), CeO2 with 20 mol% Gd2O3 (GDC20), CeO2 with 15 mol% Sm2O3 (SDC15), CeO2 with 20 mol% Sm2O3 (SDC20)) using e-beam technique in this work. The deposition rate and temperature of the substrate had influence on the formed doped cerium oxide (SDC and GDC) thin films properties. Sm and Gd doped cerium oxide thin films (~1.9 µm) were deposited on SiO2, Alloy 600 (Fe-Ni-Cr), Si(111), Si (100) and Al2O3 substrates. Investigations of the formed thin films were carried out using a Scanning electron microscope (SEM), Electron dispersive spectroscopy (EDS), X-ray diffraction (XRD), and Raman spectroscopy. It has been established that the cerium oxide based ceramic retains the crystalline structure, regardless of the concentration of the dopant and used substrate type. The most dominant crystallographic orientation of formed thin films was cubic (111). Raman spectroscopy measurements showed the peak (465cm-1) of pure ceria corresponding to F2g vibrational mode. First-order peaks, inherent to cerium oxide, were shifted to a region of lower wavenumbers and depend on dopant concentration. The peaks for all formed thin films were similar to each other in form but the position, half width and their intensity varied depending on the dopant concentration. Raman peaks position at 550 cm-1 and 600 cm-1 could be explained as change of oxygen vacancy amount due to the cerium transition between oxidized and reduced forms of Се3+⇄Се4+. |
