| Title |
Nikelio titanato plonų sluoksnių, naudojamų ReRAM atminties technologijose, sintezė ir savybių tyrimas / |
| Translation of Title |
Synthesis and characterisation of nickel titanate thin films properties used in ReRam memory technology. |
| Authors |
Janulionis, Gediminas |
| Full Text |
|
| Pages |
41 |
| Keywords [eng] |
nickel titanate ; ReRAM ; memristor |
| Abstract [eng] |
Nickel titanate is a n-type semiconductor, antiferromagnetic and he has of particular interest due to their versatile electrical and magnetic properties, such as their antiferromagnetic behavior and have good optical and electrical properties. The paper presents forming copper oxide films magnetron sputtering coating layer-by-layer method on glass and silicon substrate. Formed Nickel titanate films investigated X-ray difraction spectroscopy, ultraviolet and visible light spectrometer, the four-probe method. X-ray diffraction showed that thin films, deposited on silicon substrate show NiO, TiO2 rutile, anatase and NiTiO3 rhombohedral phases. Lowest temperature formed NiTiO3 is 600 oC. |
| Dissertation Institution |
Kauno technologijos universitetas. |
| Type |
Master thesis |
| Language |
Lithuanian |
| Publication date |
2016 |
