| Abstract [eng] |
The main goal of this study was the deposition of silver indium selenide on the commercial architectural textile, which consists of polyester (PES) fabric with elastic polyvinylchloride (PVC) layers deposited on both sides. It contains CaCO3 and TiO2 fillers as well. The deposition has been successfully carried out by the newly proposed combination of chemical bath deposition method and successive ionic layer absorption and reaction (SILAR). SILAR method is characterized as a simple technique, which does not require any specific conditions and reuse the same solutions prepared for Ag-In-Se deposition. The formed Ag-In-Se films were characterized by scanning electron microscopy / energy-dispersive spectroscopy (SEM / EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and UV-Vis analysis methods. The angle of distilled water drop contact with deposited layers was measured. In the FT-IR spectra of the samples, not only absorption peaks of PES / PVC textile with fillings were identified, but also hydrogen bond vibrations of deposited layers. Results of the XRD and XPS analysis of the deposited films proved the presence of indium alloyed Ag2Se and Ag solid compounds. The highest indium concentration was determined at the top layers of the films where it varied from 3.28 up to 15.26 at. %. A detailed study by XRD and XPS allowed concluding that a larger portion of indium was doped in the crystalline Ag phase. The rest of the indium was doped in the crystalline Ag2Se phase or formed small amounts of X-ray amorphous (or ultra-thin) In-Se or Ag-In-Se phases. The probability of formation of Ag-In-Se compounds was backed up by the determined band gap values of the films, which were in good agreement with the corresponding band gap values measured for Ag-In-Se compounds formed by other methods. Calculated band gap values vary from 1.45 up to 1.75 eV depending on the number of the deposition cycles. The obtained results indicate that the PES / PVC textile with the deposited Ag-In-Se layers find application in optoelectronic devices. |
