Title Buried subwavelength gratings for polarization pinning of bottom-emitting GaAs VCSELs
Authors Strandberg, Erik ; Juodėnas, Mindaugas ; Grabowski, Alexander ; Haglund, Åsa ; Larsson, Anders
DOI 10.1109/JSTQE.2026.3714146
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Is Part of IEEE Journal of selected topics in quantum electronics.. Piscataway, NJ : IEEE. 2026, vol. 32, iss. 6, art. no. 1701408, p. 1-8.. ISSN 1077-260X. eISSN 1558-4542
Keywords [eng] monolithic integration ; polarization pinning ; subwavelength gratings ; Vertical-cavity surface-emitting laser
Abstract [eng] We demonstrate bottom-emitting GaAs vertical-cavity surface-emitting lasers (VCSELs) incorporating a buried subwavelength grating in the top, highly reflective distributed Bragg reflector (DBR), with oxide aperture diameters ranging from 2 to 6. The buried grating successfully pins the polarization for aperture diameters up to 4 μm, and the 3 μm aperture VCSELs achieve single-mode, single-polarization operation, delivering 3.9 mW of output power with a side-mode suppression ratio exceeding 30 dB and an orthogonal polarization suppression ratio (OPSR) of 20 dB. Simulations and measurements indicate that the buried surface-etched grating can only weakly influence the lasing mode in the bottom-emitting configuration, thereby preventing polarization pinning of higher-order modes in larger-aperture VCSELs. The surface-etched gratings introduce minor degradation in threshold current, slope efficiency, and beam profile.
Published Piscataway, NJ : IEEE
Type Journal article
Language English
Publication date 2026
CC license CC license description