| Title |
Low-temperature direct PECVD synthesis of graphene on Si(100) with increased methane flow: structure and photoelectric properties |
| Authors |
Kumža, Vidmantas ; Gudaitis, Rimantas ; Guobienė, Asta ; Vasiliauskas, Andrius ; Meškinis, Šarūnas |
| DOI |
10.3390/mi17070801 |
| Full Text |
|
| Is Part of |
Micromachines.. Basel : MDPI. 2026, vol. 17, iss. 7, art. no. 801, p. 1-15.. ISSN 2072-666X |
| Keywords [eng] |
AFM ; CAFM ; low-temperature graphene synthesis ; microwave PECVD ; photoelectric properties ; Raman scattering spectroscopy |
| Abstract [eng] |
Graphene was directly synthesized on monocrystalline Si(100) at 500 °C by microwave plasma-enhanced chemical vapor deposition using an increased CH4/H2 gas flow ratio. Raman analysis revealed spectral features and intensity ratios consistent with the growth of hydrogenated graphene and revealed changes in defect structure, graphene layer number, and self-doping. Atomic force microscopy measurements showed that the surface morphology and local conductivity strongly depended on the growth conditions. The electrical and photoelectrical characteristics of graphene/Si junctions were correlated with the Raman parameters and surface morphology. For the hydrogenated graphene samples synthesized at 500 °C, the photocurrent, short-circuit current, and open-circuit voltage were found to be competitive with those of pristine graphene reference samples grown at 700 °C. The results demonstrate the potential of low-temperature direct PECVD synthesis for graphene/Si optoelectronic devices. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2026 |
| CC license |
|
