| Title |
Photoluminescence properties of porous silicon with CdSe/ZnS quantum dots |
| Another Title |
Porėtojo silicio su CdSe/ZnS kvantiniais taškais fotoliuminescencinės savybės. |
| Authors |
Jarimavičiūtė-Žvalionienė, Renata ; Waluk, Jacek ; Prosyčevas, Igoris |
| DOI |
10.5755/j01.ms.17.3.585 |
| Full Text |
|
| Is Part of |
Materials science = Medžiagotyra.. Kaunas : Technologija. 2011, vol. 17, no. 3, p. 232-235.. ISSN 1392-1320. eISSN 2029-7289 |
| Keywords [eng] |
Chemical etching ; Porous silicon ; Photoluminescence ; Absorption ; Quantum dots |
| Abstract [eng] |
In this work we have produced visible light emitting quantum dots (QD) of CdSe/ZnS and precipitated them onto the surface of porous silicon structure. Combining basic materials, such as porous silicon, with nanoparticles enables producing of low-cost light emitting materials, what is economically useful and important nowadays. The porous silicon (PS) structures were prepared from 5 min to 60 min by chemical etching at room temperature in HF : HNO3 solution and cleaned in the H2SO4 : H2O2 mixture. The structures of PS and PS-QD were investigated by SEM and UV-VIS spectroscopy. Absorption and photoluminescence of the samples, were measured in the near UV and visible spectral region. Two peaks of photoluminescence of PS-QD at 550 nm and 682 nm were found and different increase of photoluminescence intensity of these peaks depending on excitation wavelength was detected and discussed. |
| Published |
Kaunas : Technologija |
| Type |
Journal article |
| Language |
English |
| Publication date |
2011 |
| CC license |
|
