Title Oxygen ion beam etching of diamond like carbon films /
Another Title Deimanto tipo anglies dangų ėsdinimas deguonies jonų pluošteliu.
Authors Meškinis, Šarūnas ; Kopustinskas, Vitoldas ; Šlapikas, Kęstutis ; Gudaitis, Rims ; Guobienė, Asta ; Tamulevičius, Sigitas
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Is Part of Materials science = Medžiagotyra.. Kaunas : Technologija. 2007, vol. 13, no. 4, p. 282-285.. ISSN 1392-1320
Keywords [eng] diamond like carbon ; oxygen ion ; ion beam etching
Abstract [eng] Effects of the oxygen ion beam etching of ion beam synthesized diamond like carbon (DLC) films were investigated in present study. The etching rates as well as contact angle with water and surface morphology before and after the oxygen ion beam treatment were studied. "Conventional" hydrogenated diamond like carbon (DLC) films were synthesized from acetylene gas, while silicon and SiOx doped DLC films were deposited from hexamethyldisiloxane vapor and acetylene gas mixture, and hexamethyldisiloxane vapor and hydrogen gas mixture respectively. In all cases ion beam etching resulted in flat smooth surfaces. Etching rate of the "conventional" DLC films synthesized from acetylene and DLC films deposited from hexamethyldisiloxane vapor and acetylene gas mixture was 44 nm/min and 29 nm/min respectively. Thickness of the SiOx doped DLC film synthesized from hexamethyldisiloxane vapor and acetylene gas mixture slightly increased as a result of the oxygen ion beam treatment. Contact angle with water of the DLC films synthesized from acetylene after the ion beam etching remained the same. While contact angle of the diamond-like carbon films deposited from hexamethyldisiloxane vapor and acetylene gas mixture decreased from 68 degrees to 55 degrees. Contact angle with water of SiOx doped DLC films after the oxygen ion beam treatment was similar to the contact angle with water of the silicon dioxide. Observed results were explained by different etching rates of the different carbon and hydrocarbon fractures as well as by competition between two processes: ion beam etching and oxidation of the Si and SiOx.
Published Kaunas : Technologija
Type Journal article
Language English
Publication date 2007
CC license CC license description