| Title |
Simulation of reactive sputter deposition of TiO2 films |
| Another Title |
TiO2 sluoksnių reaktyviojo nusodinimo modeliavimas. |
| Authors |
Knizikevičius, Rimantas |
| Full Text |
|
| Is Part of |
Materials science = Medžiagotyra.. Kaunas : Technologija. 2010, vol. 16, no. 3, p. 202-204.. ISSN 1392-1320. eISSN 2029-7289 |
| Keywords [eng] |
reactive sputter deposition ; TiO2 ; hysteresis |
| Abstract [eng] |
The reactive sputter deposition of titanium dioxide films in Ar + O2 atmosphere is considered. The processes of sputtering, adsorption and heterogeneous reactions are included in the model. The partial pressure of O2 molecules is calculated as a function of the flow rate of the reactive gas, pumping speed, sputtering yields of Ti atoms and TiO2 molecules, and reaction rate constant. The dependences of concentrations of TiO2 molecules on the target and substrate surfaces and deposition rate upon the O2 flow rate are obtained. Special attention is given to the phenomenon of formation of a hysteresis loop. It is found that the increase of the pumping speed, chamber volume, reaction rate constant, and sputtering yield of TiO2 molecules as well as decrease of the target surface area and sputtering yield of Ti atoms reduce the size of the hysteresis loop. |
| Published |
Kaunas : Technologija |
| Type |
Journal article |
| Language |
English |
| Publication date |
2010 |
| CC license |
|
