| Title |
Optical, XPS and XRD studies of semiconducting copper sulfide layers on a polyamide film / |
| Authors |
Krylova, Valentina ; Andrulevičius, Mindaugas |
| DOI |
10.1155/2009/304308 |
| Full Text |
|
| Is Part of |
International journal of photoenergy.. New York, NY : Hindawi. 2009, vol. 2009, art. no. 304308, p. 1-8.. ISSN 1110-662X. eISSN 1687-529X |
| Keywords [eng] |
higher polythionic acids ; thin-films ; surface ; selenide ; cuxs ; polyethylene ; temperature ; deposition |
| Abstract [eng] |
Copper sulfide layers were formed on polyamide PA 6 surface using the sorption-diffusion method. Polymer samples were immersed for 4 and 5h in 0.15mol.dm−3K2S5O6 solutions and acidified with HCl (0.1mol.dm−3) at 20C. After washing and drying, the samples were treated with Cu(I) salt solution. The samples were studied by UV/VIS, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) methods. All methods confirmed that on the surface of the polyamide film a layer of copper sulfide was formed. The copper sulfide layers are indirect band-gap semiconductors. The values of Ebg are 1.25 and 1.3eV for 4h and 5h sulfured PA 6 respectively. Copper XPS spectra analyses showed Cu(I) bonds only in deeper layers of the formed film, while in sulfur XPS S 2p spectra dominating sulfide bonds were found after cleaning the surface with Ar+ ions. It has been established by the XRD method that, beside Cu2S, the layer contains Cu1.9375S as well. For PA 6 initially sulfured 4h, grain size for chalcocite, Cu2S, was 35.60nm and for djurleite, Cu1.9375S, it was 54.17nm. The sheet resistance of the obtained layer varies from 6300 to 102Ω/cm2. |
| Published |
New York, NY : Hindawi |
| Type |
Journal article |
| Language |
English |
| Publication date |
2009 |
