| Title |
Thermal oxidation process influence to the three-dimensional integrated structures / |
| Another Title |
Terminės oksidacijos proceso įtaka trimatėms integrinėms struktūroms. |
| Authors |
Andriukaitis, D ; Anilionis, R |
| Full Text |
|
| Is Part of |
Elektronika ir elektrotechnika.. Kaunas : Technologija. 2009, Nr. 8, p. 81-84.. ISSN 1392-1215. eISSN 2029-5731 |
| Abstract [eng] |
Problems of thermal oxidation process influence, related with MOS transistors separation was researched. Mechanical models are used to describe stress analysis coupled with oxidation processes: elastic, viscous, visco-elastic mechanical models. Three-dimensional integrated structures are formed using the finite element method for local thermal oxidation process simulation. Determinated, that parameters of three-dimensional integrated element and three-dimensional integrated structure change due to the thermal technology, which are difficult to identify and evaluate during the production. Redistribution of impurities in the thermal process is very important for the production of three dimensional integrated structures of increasingly higher integration degree, impurities move to other areas or redistribute because of the thermal process, error occurs in the formed areas. |
| Published |
Kaunas : Technologija |
| Type |
Journal article |
| Language |
English |
| Publication date |
2009 |
| CC license |
|
