| Abstract [eng] |
Improving quality of life and constantly increasing needs of people require more and more energy resources. As a result, energy obtained by combustion of traditional fuel sources such as petroleum and coal produces high amounts of carbon dioxide that influences climate change and causes global warming. This problem get people concerned and they search for alternative ecological energy resources, which could be used instead of petroleum and coal. Solar energy, for example, is one such inexhaustible and completely ecological energy resource. Seeking to make solar energy widely accessible solar cells were invented. Solar cells are systems that absorb solar energy and convert it into electric energy. In recent decades the process of manufacturing solar cells is improving and new types of them are being created in order to maximize the usage of solar energy. Among them perovskite solar cells have emerged and they are showing a great potential. In such type of solar cells, positive charge can be transported either by small molecules or polymer semiconductors. Both types of these p-type semiconductors have some advantages, as well as disadvantages. In this project small organic semiconductors, containing vinyl groups and the capability to polymerize, were synthesized and these compounds could be used for manufacturing solar cells. During this project semiconductor compounds HTM1‒HTM4 were synthesized. Thermal analysis of these compounds revealed that HTM2 and HTM4 are molecular glasses, and the compound HTM4 has only amorphous state. These new semiconductors are capable of polymerizing in the thermal range between 170‒220 °C. Ionization potentials of all compounds were measured, and determined values are in a range of 5,04 eV to 5,37 eV, showing that compounds are suitable for construction of perovskite solar cells. Measurements of drift mobility were performed and showed that semiconductor HTM4, which has the longest π conjugated system, demonstrates the best drift mobility value of 2,5∙10-3 cm2/Vs. Although drift mobilities of other semiconductors were lower, they are also suitable for the usage in mentioned devices. |
