Title Kinetics of residual stresses in electrochemically doped ITO thin films
Another Title Elektrochemiškai legiruotų ITO dangų liekamųjų įtempių kinetika.
Authors Užupis, Arnoldas ; Vengalis, Bonifacas ; Lisauskas, Vaclovas ; Tamulevičius, Sigitas ; Augulis, Liudvikas
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Is Part of Materials science = Medžiagotyra /.. Kaunas : Technologija. 2006, vol. 12, no. 4, p. 297-299.. ISSN 1392-1320. eISSN 2029-7289
Keywords [eng] Indium tin oxide ; Residual stress ; Electrochemical doping ; Magnetron sputtering
Abstract [eng] Indium-Tin-Oxide (ITO) thin films were deposited by a reactive DC magnetron sputtering at T = (100 ÷ 700) °C on amorphous quartz substrates. Oxygen content of the as grown films was varied by electrochemical doping using 20 % water solution of acetic acid (CH3COOH). The dependence of residual stress of the system ITO – quartz substrate was studied in a course of the electrochemical doping. We have found that residual stress of the ITO thin films decreased with doping by additional oxygen ions into the films from the solution.
Published Kaunas : Technologija
Type Journal article
Language English
Publication date 2006
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