| Title |
The influence of Se treatment and annealing on ferromagnetic-nGaAs Schottky contact and interface properties / |
| Another Title |
Paviršiaus modifikavimo selenu ir kaitinimo poveikis feromagnetiko- nGaAs Schotkio sąlyčio skiriamojo paviršiaus savybėms. |
| Authors |
Meškinis, Š ; Šlapikas, K ; Gudaitis, R ; Puišo, J ; Pucėta, M ; Jankauskas, J ; Balčaitis, G |
| Full Text |
|
| Is Part of |
Materials science = Medžiagotyra.. Kaunas : Technologija. 2003, vol. 9, no. 2, p. 157-163.. ISSN 1392-1320 |
| Keywords [eng] |
GaAs ; ferromagnetic ; Schottky contact ; Se treatment ; XPS ; I-V characteristics |
| Abstract [eng] |
Effects of the selenium treatment on the interface structure and electrical characteristics of ferromagnetic-GaAs Schottky contacts were investigated. Selenium treatment significantly suppressed interfacial reactions between the Co and GaAs. However, in this case intensive Se segregation takes place at the Co(Se)-GaAs interface. The annealing results in the further CoAs formation and the increase of the amount of Ga in the Co film. Se treatment significantly suppresses thermally stimulated Co and GaAs interfacial reactions, too. Annealing in the N2 gas ambient results in the decrease of the effective barrier height both of Co-nGaAs and Co(Se)-nGaAs Schottky contacts. It can be explained by Co and GaAs interfacial reaction for Co-GaAs contact and by Co and Se reactions for Co(Se)-GaAs Schottky contact. |
| Published |
Kaunas : Technologija |
| Type |
Journal article |
| Language |
English |
| Publication date |
2003 |
| CC license |
|
