| Abstract [eng] |
structural, optical, and electronic properties, making them ideal candidates for various advanced applications. This study focuses on the synthesis, characterization, and evaluation of the electrical and electronic properties of pure and Ni-doped ZnO nanoparticles (Ni:ZnO) synthesized via a co-precipitation method with varying Ni concentrations (2%, 4%, 6%, and 8%). X-ray diffraction analysis confirmed the wurtzite hexagonal structure of ZnO, with lattice distortion increasing proportionally to Ni doping. A secondary NiO phase was detected at higher doping levels, indicating the solubility limit of Ni in ZnO. The average crystallite size, calculated using Debye-Scherrer’s equation, decreased from 31 nm in pure ZnO to 23 nm in 8% Ni-doped ZnO, confirming dopinginduced size reduction. UV-visible spectroscopy revealed a blue shift in the optical bandgap from 3.23 eV for pure ZnO to 3.41 eV for 8% Ni-doped ZnO, attributed to Burstein-Moss effect. Fourier transform infrared spectroscopy identified changes in vibrational modes, with shifts in peaks corresponding to Zn-O and Ni-O bonds, indicating successful Ni incorporation. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy confirmed uniform particle morphology and elemental composition. Dielectric studies showed that the dielectric constant increased significantly with Ni doping, reaching a maximum value of 69 at 6% doping, while AC conductivity improved with frequency, demonstrating frequency-dependent conductivity due to hopping charge carriers. The findings reveal that Ni doping enhances the structural, optical, and dielectric properties of ZnO, making it suitable for optoelectronics, high-frequency devices, and dielectric materials. |
