| Abstract [eng] |
Samrium doped cerium oxide has good ionic conductivity at low temperatures (below 600 °C) are frequently compared with other oxides. The main reason without good ionic conductivity, composed of oxygen vacancies, is the emergence of electronic conductivity component that is not useful. The samples were analyzed for the deposition parameters on the ionic conductivity by using an electron beam physical vapor deposition method. Parameters were changed of substrate temperature (50° C, 150 °C, 300 °C, 450 °C, 600 °C), and the deposition speed was 0,8nm / s and 1,2nm / s. It was defined that the higher deposition temperature the biger grains forms on the surface and that effects ionic conduction. The samples impedance were measured from 1000°C to 200°C then arhenius plots where drawn and determined the activation energy and the diffusion coefficient of vacancies mobility. The results shows that at 300°C deposition. Samples has the highest ionic conductivity of oxygen vacancies, diffusion coefficient and the lowest activation energy (0,862eV), also has a lower electron conductivity than the other samples deposited in higher temperature. |
