| Abstract [eng] |
The prepared BiFe1-xNixO3 thin film was sputtered using a DC reactive magnetron system. XRD graphs showed that (012), (104), (110), (121) lattice planes were formed, which belongs to R3c space group, with additional BFO lattice planes and with Bi2Fe4O9, Bi25FeO40 parasitic phases. It was investigated that the formed films exhibited ferroeletric properites. Ni doped thin films were found to have lower remnant polarization than pure BFO. The cause of this was an increase in bismuth and oxygen vacancies. The coercive field was investigated over a wide range of frequency of voltage used, it was found that the domain wall motions have two mechanisms, creep and flow. These mechanisms change at around 4,5 Hz. Volt-ampere characteristic showed an ohmic conductivity in nickel doped bismuth ferrite. The change of dielectric permeability under different temperatures revealed a change in phase transition temperatures. |
