Title Bismuto titanato, legiruoto cirkoniu, feroelektrinių sluoksnių sintezė ir tyrimas /
Translation of Title Synthesis and Investigation of Ferroelectric Zirconium Doped Bismuth Titanate Thin Films.
Authors Kulvinskas, Julius
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Pages 67
Keywords [eng] bismuth ; titanate ; zirconium ; ferroelectric ; hysteresis
Abstract [eng] Zirconium doped bismuth titanate thin films were deposited by reactive magnetron layer-by-layer sputtering method. Thin films were deposited on platinized silicon (Pt/Ti/SiO2/Si (200 nm, 20 nm, 1 μm, 380 μm)) substrates at 450 °C. Studies have shown that bismuth titanate thin films have Aurivillius phase and contain perovskite structure. The remnant polarization of 12,2 μC/cm2 and coercive field of 30,4 kV/cm were achieved in thin films that approximately contained 7 % zirconium (x = 0,2) in them. The current–voltage characteristic of thin films showed that space-charge-limited conduction mechanism is present.
Dissertation Institution Kauno technologijos universitetas.
Type Master thesis
Language Lithuanian
Publication date 2017