Title |
Bismuto titanato, legiruoto cirkoniu, feroelektrinių sluoksnių sintezė ir tyrimas / |
Translation of Title |
Synthesis and Investigation of Ferroelectric Zirconium Doped Bismuth Titanate Thin Films. |
Authors |
Kulvinskas, Julius |
Full Text |
|
Pages |
67 |
Keywords [eng] |
bismuth ; titanate ; zirconium ; ferroelectric ; hysteresis |
Abstract [eng] |
Zirconium doped bismuth titanate thin films were deposited by reactive magnetron layer-by-layer sputtering method. Thin films were deposited on platinized silicon (Pt/Ti/SiO2/Si (200 nm, 20 nm, 1 μm, 380 μm)) substrates at 450 °C. Studies have shown that bismuth titanate thin films have Aurivillius phase and contain perovskite structure. The remnant polarization of 12,2 μC/cm2 and coercive field of 30,4 kV/cm were achieved in thin films that approximately contained 7 % zirconium (x = 0,2) in them. The current–voltage characteristic of thin films showed that space-charge-limited conduction mechanism is present. |
Dissertation Institution |
Kauno technologijos universitetas. |
Type |
Master thesis |
Language |
Lithuanian |
Publication date |
2017 |