Title Bismuto titanato, legiruoto cirkoniu, feroelektrinių sluoksnių sintezė ir tyrimas
Translation of Title Synthesis and Investigation of Ferroelectric Zirconium Doped Bismuth Titanate Thin Films.
Authors Kulvinskas, Julius
Full Text Download
Pages 67
Keywords [eng] bismuth ; titanate ; zirconium ; ferroelectric ; hysteresis
Abstract [eng] Zirconium doped bismuth titanate thin films were deposited by reactive magnetron layer-by-layer sputtering method. Thin films were deposited on platinized silicon (Pt/Ti/SiO2/Si (200 nm, 20 nm, 1 μm, 380 μm)) substrates at 450 °C. Studies have shown that bismuth titanate thin films have Aurivillius phase and contain perovskite structure. The remnant polarization of 12,2 μC/cm2 and coercive field of 30,4 kV/cm were achieved in thin films that approximately contained 7 % zirconium (x = 0,2) in them. The current–voltage characteristic of thin films showed that space-charge-limited conduction mechanism is present.
Dissertation Institution Kauno technologijos universitetas.
Type Master thesis
Language Lithuanian
Publication date 2017