Title Indžio-alavo oksido plonų dangų nusodinimas plazma aktyvuoto reaktyvaus terminio garinimo metodu ir savybių tyrimas /
Translation of Title Formation of Indium Tin Oxide Thin Films by Reactive Plasma Assisted Thermal Evaporation.
Authors Ramanauskas, Ruslanas
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Pages 42
Keywords [eng] thin films ; ITO ; PVD ; reactive plasma assisted thermal evaporation
Abstract [eng] Transparent and conductive layers are widely used for many microelectronic applications, such as transparent in the visible and near infra-red regions electrical contact electrodes in displays, heatable glass and thin film solar cells. Transparent and conductive materials are semiconductors with band gap higher than 3 eV, high transparency (> 80%) in the visible light wavelength range and specific resistivity lower than 0,00001 Ω·cm. Indium-tin-oxide (ITO) thin films were fabricated on glass substrates by reactive plasma assisted thermal evaporation method. The influence of the mass ratio on the electrical and optical properties of ITO thin films were investigated. The X-ray diffraction spectroscopy, energy-dispersive X-ray spectroscopy, scanning electron microscopy, ultraviolet and visible light spectrometer and the four-probe methods were used to investigate ITO thin films. The transmittance of the films increased and resistivity decreased with the increase of the In/Sn mass ratio from 4.3 up to 10.
Dissertation Institution Kauno technologijos universitetas.
Type Master thesis
Language Lithuanian
Publication date 2017