Title In situ thermal cross-linking of 9,9'-spirobifluorene-based hole-transporting layer for perovskite solar cells /
Authors Daskeviciute-Geguziene, Sarune ; Truong, Minh Anh ; Rakstys, Kasparas ; Daskeviciene, Maryte ; Hashimoto, Ruito ; Murdey, Richard ; Yamada, Takumi ; Kanemitsu, Yoshihiko ; Jankauskas, Vygintas ; Wakamiya, Atsushi ; Getautis, Vytautas
DOI 10.1021/acsami.3c13950
Full Text Download
Is Part of ACS Applied materials & interfaces.. Washington : American Chemical Society. 2024, vol. 16, iss. 1, p. 1206-1216.. ISSN 1944-8244. eISSN 1944-8252
Keywords [eng] cross-linking ; hole-transporting layer ; perovskite solar cell ; spirobifluorene ; temperature
Abstract [eng] A novel 9,9'-spirobifluorene derivative bearing thermally cross-linkable vinyl groups (V1382) was developed as a hole-transporting material for perovskite solar cells (PSCs). After thermal cross-linking, a smooth and solvent-resistant three-dimensional (3D) polymeric network is formed such that orthogonal solvents are no longer needed to process subsequent layers. Copolymerizing V1382 with 4,4'-thiobisbenzenethiol (dithiol) lowers the cross-linking temperature to 103 °C via the facile thiol-ene "click" reaction. The effectiveness of the cross-linked V1382/dithiol was demonstrated both as a hole-transporting material in p-i-n and as an interlayer between the perovskite and the hole-transporting layer in n-i-p PSC devices. Both devices exhibit better power conversion efficiencies and operational stability than devices using conventional PTAA or Spiro-OMeTAD hole-transporting materials.
Published Washington : American Chemical Society
Type Journal article
Language English
Publication date 2024
CC license CC license description