| Abstract [eng] |
Semiconductive thin films of transition metal chalcogenides are a promising technology for various applications, such as photovoltaics. Zinc oxide and cadmium selenide are semiconductive materials with applicable properties for photovoltaic devices. In this work, methods of zinc oxide and cadmium selenide thin film formation on fluorine doped tin oxide coated glass, product analysis and evaluation are presented. Zinc oxide thin film is formed from a suspension of zinc oxide nanoparticles, using the spin-coating method. The zinc oxide coated surface is used as the substrate for the synthesis of cadmium selenide thin films. The cadmium selenide thin films are synthesized using chemical methods: successive ionic layer adsorption and reaction, chemical bath deposition, as well as combinations of the two. The products’ properties, composition and structure were analyzed. Based on the results, the products were evaluated according to the method of cadmium selenide synthesis. The thin film synthesized using the successive ionic layer adsorption and reaction method had a unique composition and lowest sheet resistance. Thin films formed using method combinations showed good optical properties, largest cadmium selenide crystallites and provided the smoothest and the roughest of the analyzed surfaces. The chemical bath deposition method formed a thin film with the greatest electron beam permeability. The analysis results of thin films formed using the successive ionic layer adsorption and reaction method were determined to be the closest to the objective of this work. Therefore, a process flow diagram for this method’s application in thin film formation was suggested. Collective and personal protective gear was suggested according to the risk factors associated with the equipment and processes used in this work. |
