| Title |
The graphene structure’s effects on the current-voltage and photovoltaic characteristics of directly synthesized graphene/n-Si(100) diodes / |
| Authors |
Jankauskas, Šarūnas ; Gudaitis, Rimantas ; Vasiliauskas, Andrius ; Guobienė, Asta ; Meškinis, Šarūnas |
| DOI |
10.3390/nano12101640 |
| Full Text |
|
| Is Part of |
Nanomaterials.. Basel : MDPI. 2022, vol. 12, iss. 10, art. no. 1640, p. 1-19.. ISSN 2079-4991 |
| Keywords [eng] |
graphene ; MW-PECVD ; photovoltaics |
| Abstract [eng] |
Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current–voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO2 interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2022 |
| CC license |
|
