| Title |
Structural and chemical peculiarities of nitrogen-doped graphene grown using direct microwave plasma-enhanced chemical vapor deposition / |
| Authors |
Meškinis, Šarūnas ; Gudaitis, Rimantas ; Andrulevičius, Mindaugas ; Lazauskas, Algirdas |
| DOI |
10.3390/coatings12050572 |
| Full Text |
|
| Is Part of |
Coatings.. Basel : MDPI. 2022, vol. 12, iss. 5, art. no. 572, p. 1-9.. ISSN 2079-6412 |
| Keywords [eng] |
microwave ; plasma-enhanced ; CVD ; nitrogen-doped ; graphene ; catalyst-less ; transfer-less ; synthesis |
| Abstract [eng] |
Chemical vapor deposition (CVD) is an attractive technique which allows graphene with simultaneous heteroatom doping to be synthesized. In most cases, graphene is grown on a catalyst, followed by the subsequent transfer process. The latter is responsible for the degradation of the carrier mobility and conductivity of graphene due to the presence of the absorbants and transfer-related defects. Here, we report the catalyst-less and transfer-less synthesis of graphene with simultaneous nitrogen doping in a single step at a reduced temperature (700 °C) via the use of direct microwave plasma-enhanced CVD. By varying nitrogen flow rate, we explored the resultant structural and chemical properties of nitrogen-doped graphene. Atomic force microscopy revealed a more distorted growth process of graphene structure with the introduction of nitrogen gas—the root mean square roughness increased from 0.49 ± 0.2 nm to 2.32 ± 0.2 nm. Raman spectroscopy indicated that nitrogen-doped, multilayer graphene structures were produced using this method. X-ray photoelectron spectroscopy showed the incorporation of pure pyridinic N dopants into the graphene structure with a nitrogen concentration up to 2.08 at.%. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2022 |
| CC license |
|
