| Title |
Charge transfer rates and electron trapping at buried interfaces of perovskite solar cells / |
| Authors |
Levine, Igal ; Al-Ashouri, Amran ; Musiienko, Artem ; Hempel, Hannes ; Magomedov, Artiom ; Drevilkauskaite, Aida ; Getautis, Vytautas ; Menzel, Dorothee ; Hinrichs, Karsten ; Unold, Thomas ; Albrecht, Steve ; Dittrich, Thomas |
| DOI |
10.1016/j.joule.2021.07.016 |
| Full Text |
|
| Is Part of |
Joule.. Cambridge, MA : Cell press. 2021, vol. 5, iss. 11, p. 2915-2933.. ISSN 2542-4351 |
| Keywords [eng] |
buried interfaces ; carbazole-based SAMs ; charge transfer ; interface passivation ; interfacial recombination ; perovskite solar cell ; self-assembled monolayer ; surface photovoltage ; time-resolved PL ; time-resolved SPV |
| Abstract [eng] |
Identification of electronic processes at buried interfaces of charge-selective contacts is crucial for photovoltaic and photocatalysis research. Here, transient surface photovoltage (SPV) is used to study the passivation of different hole-selective carbazole-based SAMs. It is shown that transient SPV and transient photoluminescence provide complementary information on charge transfer kinetics and trapping/de-trapping mechanisms, and that trap-assisted non-radiative recombination losses originate from electron trapping at the SAM-modified ITO/perovskite interface. The hole transfer rates and the density of interface electron traps, obtained by fitting SPV transients with a minimalistic kinetic model, depended strongly on the SAM's chemical structure, and densities of interface traps as low as 109 cm−2, on par with highly passivated c-Si surfaces, were reached for Me-4PACz, previously used in record perovskite/silicon tandem solar cells. The extracted hole transfer rate constants and interface trap densities correlated well with the corresponding fill factors and open-circuit voltages of high-efficiency solar cells. |
| Published |
Cambridge, MA : Cell press |
| Type |
Journal article |
| Language |
English |
| Publication date |
2021 |
| CC license |
|
