| Title |
Effect of In-incorporation and annealing on CuxSe thin films / |
| Authors |
Ivanauskas, Algimantas ; Ivanauskas, Remigijus ; Ancutiene, Ingrida |
| DOI |
10.3390/ma14143810 |
| Full Text |
|
| Is Part of |
Materials.. Basel : MDPI. 2021, vol. 14, iss. 14, art. no. 3810, p. 1-12.. ISSN 1996-1944 |
| Keywords [eng] |
SILAR ; selenium ; copper selenide ; indium selenide |
| Abstract [eng] |
A study of indium-incorporated copper selenide thin film deposition on a glass substrate using a successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, the treatment with copper(II/I) ions, the incorporation of indium(III) and the annealing in the inert nitrogen atmosphere. The elemental and phasal composition, morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu0.87Se, In2Se3, and CuInSe2. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28–1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2021 |
| CC license |
|
